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Alternative methods to fabricate and evaluate copper zinc tin sulfide based absorber layers on transparent conducting electrodes.

机译:在透明导电电极上制造和评估基于铜锌锡硫化物的吸收层的替代方法。

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摘要

This study is focused on fabrication and characterization of Cu 2ZnSnS4 (CZTS) films on transparent conducting substrate. CZTS films were synthesized using solution based methods. A specially designed sequential and single stage electrochemical method as well as spin coating method was used to grow layers of precursors. Deposition of constituent metallic layers was carried out on SnO2/F (Fluorinated tin oxide or FTO) coated glass substrates. The electrodeposited/spin coated layers were annealed in a sulfur environment to obtain CZTS. Structural, morphological and optical characterization experiments were performed using several techniques including x-ray diffraction, Raman and UV-visible spectroscopy, scanning electron microscopy, and atomic force microscopy. All characterization experiments indicated the films are single phase with a measured direct band gap of ∼1.5 eV.;Photocurrent response of CZTS film grown on FTO substrate was measured using alternating front illumination and rear illumination in a Eu 3+/Eu2+ solution environment. The photoelectrochemical response exhibited during rear illumination is comparable to that obtained for front illumination. The promising photocurrent data for CZTS films suggest these films have potential application in a variety of photovoltaic devices.;A comparative study revealed that photoelectrochemical response exhibited by the films grown on molybdenum substrate is greater than that obtained for film grown on FTO substrate. A modified form of the Gärtner model to explain J-V characteristics for CZTS-electrolyte solution has been proposed. Fundamental information such as energy band gap-temperature relationship and temperature dependent study of Raman 'A' mode for CZTS thin films were also investigated in this research.
机译:这项研究的重点是透明导电衬底上Cu 2ZnSnS4(CZTS)薄膜的制备和表征。使用基于溶液的方法合成CZTS膜。特别设计的顺序和单阶段电化学方法以及旋涂方法用于生长前体层。在SnO2 / F(氟化锡氧化物或FTO)涂覆的玻璃基板上进行组成金属层的沉积。将电沉积/旋涂的层在硫环境中退火以获得CZTS。使用几种技术进行了结构,形态和光学表征实验,包括X射线衍射,拉曼光谱和紫外可见光谱,扫描电子显微镜和原子力显微镜。所有表征实验均表明该膜为单相,直接带隙测量为〜1.5 eV .;在Eu 3 + / Eu2 +溶液环境中使用交替的前照明和后照明测量了在FTO基板上生长的CZTS膜的光电流响应。在后照明期间表现出的光电化学响应与在前照明下获得的光电化学响应相当。 CZTS薄膜有希望的光电流数据表明这些薄膜在各种光伏器件中都有潜在的应用。一项比较研究表明,在钼衬底上生长的薄膜所表现出的光电化学响应要大于在FTO衬底上生长的薄膜所表现出的光电化学响应。提出了一种改进的Gärtner模型形式,用于解释CZTS电解质溶液的J-V特性。还研究了诸如CZTS薄膜的能带隙-温度关系和Raman'A'模式的温度依赖性研究等基本信息。

著录项

  • 作者

    Sarswat, Prashant Kumar.;

  • 作者单位

    The University of Utah.;

  • 授予单位 The University of Utah.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 2012
  • 页码 178 p.
  • 总页数 178
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 11:43:35

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