Impact of extreme ultraviolet mask absorber defect with pattern roughness on lithographic images

摘要

The impact of an EUV mask absorber defect with pattern roughness on lithographic images was studied. In order to reduce systematic line width roughness (LWR) of wafer printed patterns, the mask making process was improved; and in order to reduce random LWR, low line-edge roughness resist material and a critical dimension averaging method of multiple-exposure shots were introduced. Then, by using a small field exposure tool, a mask-induced systematic printed LWR was quantified and estimated at 32-nm half-pitch and 28-nm half-pitch. The measurement results of the critical mask absorber defect size were compared with the simulation, and the results were then discussed.