Method for manufacturing of LED utilized as projection light source in e.g. automotive area, involves joining metallic layers so that extensive covalent or metallic bond is formed between layers, and removing developing substrate

摘要

The method involves applying a metallic layer on one of main sides of a layer sequence (10), that is epitaxially developed in a developing substrate (14) e.g. sapphire wafer, where the main side is turned away from a main light radiation direction. A substrate carrier is provided with another main side, which exhibits another metallic layer, where the latter main side faces the main light radiation direction. The metallic layers are joined with each other so that an extensive covalent or metallic bond is formed between the two metallic layers, and the developing substrate is removed. An independent claim is also included for an optoelectronic component comprising an epitaxial developed layer sequence.