- A semi conductor gan device and method using the gan on a thin layer of sapphire filed on a substrate of polycrystalline silicon carbide

摘要

Substrate has a polycrystalline silicon carbide disk comprising parallel upper and lower surfaces with a given thickness. A thin sapphire layer (11) is provided above the upper surface of the substrate. The layer has a thickness greater than 0.1 micron. Upper surface of the layer (11) receives layers of a gallium nitride based semi-conductor device having a relatively thick gallium nitride layer. A series of layers (20) e.g. aluminum nitride transition layer, is developed on the layer (11). A gallium nitride type layer is grown above the layer (11) with a transition layer. An independent claim is also included for a method for manufacturing a nitride-III heterojunction device.