Method of characterization of layers dielectric by spectroscopy of photo - emission ultraviolet

摘要

The electron affinity of the dielectrics thick, with a thickness greater than 10 nm is measured by applying a bias voltage varying between - 4v and - 40v for example, and by taking a plurality of measuring points in order to determine a threshold reference value of photoemission (es) by proceeding by linear regression on a straight line (10) for connecting the thresholds measured (11) to the respective values of the square root of the voltage v.