METHOD FOR CHARACTERISATION OF DIELECTRIC LAYERS BY ULTRAVIOLENT PHOTO-EMISSION SPECTROSCOPY

摘要

The electron affinity of thick dielectrics, of thickness greater than 10 nanometres, is measured by applying a polarisation voltage varying between −4V and −40V, for example, and by taking several measuring points to determine a reference value of the photo-emission threshold (E_S), applying linear regression to an adjustment straight line (10) linking the measured thresholds (11) to the respective values of the square root of the voltage V.