METHOD FOR MANUFACTURING HETEROJUNCTION BIPOLAR TRANSISTOR AND POWER AMPLIFIER USING HETEROJUNCTION BIPOLAR TRANSISTOR

摘要

PPROBLEM TO BE SOLVED: To provide a power amplifier using HBT having InGaP as an emitter layer, and capable of striking a balance between thermal stability and reliability for conduction. PSOLUTION: In the HBT having an InGaP emitter layer, a GaAs layer 6 is inserted between an InGaP emitter layer 5 and an AlGaAs ballast resistance layer 7 and holes injected reversely from a base layer 4 are suppressed from diffusing and reaching the AlGaAs ballast resistance layer 7. PCOPYRIGHT: (C)2011,JPO&INPIT