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SILICON OXIDE AND SILICON OXYNITRIDE FILMS, METHOD FOR FORMING THE FILMS, AND COMPOSITION FOR CHEMICAL VAPOR DEPOSITION
SILICON OXIDE AND SILICON OXYNITRIDE FILMS, METHOD FOR FORMING THE FILMS, AND COMPOSITION FOR CHEMICAL VAPOR DEPOSITION
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机译:氧化硅和氧化硅薄膜,形成薄膜的方法以及化学气相沉积的组成
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摘要
PPROBLEM TO BE SOLVED: To provide a method for forming a silicon oxide film on a base material by chemical vapor deposition of a silane oxide precursor at a relatively low temperature. PSOLUTION: A method for forming a silicon oxide film on a base material through chemical vapor deposition of a silane oxide precursor by a reaction with an oxidizing agent includes the use of an aminosilane precursor represented by the following formulas: PR1NSiH3 (formula A); RN(SiH3)2 (formula B); and SiH3RN(R2)NR1SiH3 (formula C). In the formulas, R and R1 are selected from the group consisting of a linear, branched, or cyclic, saturated or unsaturated C2-C10 alkyl group, an aromatic, and an alkylamino group. In formula A and formula C, R and R1 can also be formed into a cyclic group (CH2)n, (wherein n is 1-6, preferably 4 or 5), and R2 represents a single bond, a (CH2)n chain, a ring, SiR2, or SiH2. PCOPYRIGHT: (C)2011,JPO&INPIT
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