Silicon oxide and silicon oxynitride films, methods for forming them, and compositions for chemical vapor deposition

摘要

A silicon oxide layer is deposited on a substrate by chemical vapor deposition (CVD) by reacting an organoaminosilane precursor, selected from specified categories, with an oxidizing agent under conditions for the formation of a silicon oxide film. Diisopropylaminosilane is the preferred organoaminosilane precursor for the formation of the silicon oxide film.