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METHOD OF MANUFACTURING SPLIT GATE NONVOLATILE SEMICONDUCTOR STORAGE DEVICE, AND SPLIT GATE NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
METHOD OF MANUFACTURING SPLIT GATE NONVOLATILE SEMICONDUCTOR STORAGE DEVICE, AND SPLIT GATE NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
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机译:分闸非易失性半导体存储装置的制造方法以及分闸非易失性半导体存储装置
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摘要
PROBLEM TO BE SOLVED: To decrease the number of processes of manufacturing a split gate nonvolatile storage device.;SOLUTION: The split gate nonvolatile storage device includes: a substrate (2); a floating gate (5) formed on the substrate (2) via a gate insulating film (7); a control gate (6) formed by the floating gate (5) via a tunnel insulating film (8); a first source/drain diffusion layer (4) formed on the substrate (2) on the side of the control gate (6); a second source/drain diffusion layer (3) formed on the substrate (2) on the side of the floating gate (5); a channel region provided to the substrate between the first source/drain diffusion layer (4) and second source/drain diffusion layer (3); and a silicide (21) in contact with the second source/drain diffusion layer (3).;COPYRIGHT: (C)2011,JPO&INPIT
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