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Split-gate type nonvolatile memory device, semiconductor device having split-type nonvolatile memory device embedded therein, and methods of forming the same
Split-gate type nonvolatile memory device, semiconductor device having split-type nonvolatile memory device embedded therein, and methods of forming the same
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机译:分裂栅型非易失性存储器件,具有嵌入其中的分裂型非易失性存储器件的半导体器件及其形成方法
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摘要
A split-gate type nonvolatile memory device includes a semiconductor substrate having a first conductivity type, a deep well having a second conductivity type in the semiconductor substrate, a pocket well having the first conductivity type in the deep well, a source line region having the second conductivity type in the pocket well, an erase gate on the source line region, and a first floating gate and a first control gate stacked sequentially on the pocket well on a side of the erase gate. The pocket well is electrically isolated from the substrate by the deep well, so that a negative voltage applied to the pocket well may not adversely affect operation of other devices formed on the substrate.
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