首页>
外国专利>
SILICON CARBIDE RAW MATERIAL FOR GROWING SILICON CARBIDE SINGLE CRYSTAL AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL USING THE SAME
SILICON CARBIDE RAW MATERIAL FOR GROWING SILICON CARBIDE SINGLE CRYSTAL AND METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL USING THE SAME
展开▼
机译:用于生长碳化硅单晶的碳化硅原材料和使用该碳化硅单晶生产碳化硅单晶的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
PROBLEM TO BE SOLVED: To provide a method for producing a high purity silicon carbide single crystal, and to provide a silicon carbide raw material used in the same.;SOLUTION: The silicon carbide raw material for growing a silicon carbide single crystal is a crushed material of a silicon carbide crystal which is grown by a single sublimation recrystallization process under such conditions that the pressure of an inert atmosphere is 133 Pa to 13.3 kPa and the partition coefficient P2 of an impurity is 0.001-0.3. The method for producing a high purity silicon carbide single crystal includes growing a 4H-type silicon carbide single crystal by using the silicon carbide raw material. The silicon carbide raw material is a crushed material of one or both of a single crystal and a polycrystal. The silicon carbide raw material may be further purified by being subjected twice or more to a sublimation recrystallization process.;COPYRIGHT: (C)2011,JPO&INPIT
展开▼