Raw material particles for growing silicon carbide, method for producing raw material particles for growing silicon carbide, and method for producing single crystal silicon carbide

摘要

PROBLEM TO BE SOLVED: To obtain raw material grains for silicon carbide growth capable of generating a silicon carbide single crystal, while adjusting a Si/C ratio.SOLUTION: Raw material grains for silicon carbide growth in one embodiment are raw material grains for silicon carbide growth for generating a silicon carbide single crystal by recrystallizing sublimation gas on a seed crystal, in which at least a part of a surface of each grain body is coated with a coating layer comprising carbon.SELECTED DRAWING: Figure 1