SILICON CARBIDE RAW MATERIAL FOR GROWING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL, AND METHOD FOR PRODUCING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a high purity silicon carbide single crystal and a raw material used in the same.;SOLUTION: The silicon carbide raw material for growing the silicon carbide single crystal is the pulverized material of one or both of a silicon carbide single crystal or a silicon carbide polycrystal, grown by a sublimation recrystallization method. The method for producing the silicon carbide single crystal includes a process for growing the silicon carbide single crystal on a seed crystal by the sublimation recrystallization method using the raw material.;COPYRIGHT: (C)2005,JPO&NCIPI