The method of producing a silicon carbide single crystal using the same and single-crystal silicon carbide for growing silicon carbide raw material

摘要

PPROBLEM TO BE SOLVED: To provide a method for producing a high purity silicon carbide single crystal, and to provide a silicon carbide raw material used in the same. PSOLUTION: The silicon carbide raw material for growing a silicon carbide single crystal is a crushed material of a silicon carbide crystal which is grown by a single sublimation recrystallization process under such conditions that the pressure of an inert atmosphere is 133 Pa to 13.3 kPa and the partition coefficient P2 of an impurity is 0.001-0.3. The method for producing a high purity silicon carbide single crystal includes growing a 4H-type silicon carbide single crystal by using the silicon carbide raw material. The silicon carbide raw material is a crushed material of one or both of a single crystal and a polycrystal. The silicon carbide raw material may be further purified by being subjected twice or more to a sublimation recrystallization process. PCOPYRIGHT: (C)2011,JPO&INPIT