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High purity copper or high purity copper alloy sputtering target, method for producing the same, and high purity copper or high purity copper alloy sputtered film

机译:高纯度铜或高纯度铜合金溅射靶,其制造方法以及高纯度铜或高纯度铜合金溅射膜

摘要

Provided is a high-purity copper or high-purity copper alloy sputtering target of which the purity is 6N or higher and in which the content of the respective components of P, S, O and C is 1 ppm or less, wherein the number of nonmetal inclusions having a particle size of 0.5µm or more and 20µm or less is 30,000 inclusions/g or less. As a result of using high-purity copper or high-purity copper alloy from which harmful inclusions of P, S, C and O system have been reduced as the raw material and controlling the existence form of nonmetal inclusions, the present invention addresses a reduction in the percent defect of wirings of semiconductor device formed by sputtering a high-purity copper target so as to ensure favorable repeatability.
机译:提供一种纯度为6N以上且P,S,O和C的各成分的含量为1ppm以下的高纯度铜或高纯度铜合金溅射靶。粒径为0.5μm以上且20μm以下的非金属夹杂物为30,000个夹杂物/ g以下。通过使用已经减少了P,S,C和O系统的有害夹杂物的高纯度铜或高纯度铜合金作为原材料并控制非金属夹杂物的存在形式,本发明致力于减少通过溅射高纯度铜靶形成的半导体器件的布线的缺陷百分比,从而确保良好的可重复性。

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