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High purity copper or high purity copper alloy sputtering target, method for producing the same, and high purity copper or high purity copper alloy sputtered film
High purity copper or high purity copper alloy sputtering target, method for producing the same, and high purity copper or high purity copper alloy sputtered film
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机译:高纯度铜或高纯度铜合金溅射靶,其制造方法以及高纯度铜或高纯度铜合金溅射膜
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摘要
Provided is a high-purity copper or high-purity copper alloy sputtering target of which the purity is 6N or higher and in which the content of the respective components of P, S, O and C is 1 ppm or less, wherein the number of nonmetal inclusions having a particle size of 0.5µm or more and 20µm or less is 30,000 inclusions/g or less. As a result of using high-purity copper or high-purity copper alloy from which harmful inclusions of P, S, C and O system have been reduced as the raw material and controlling the existence form of nonmetal inclusions, the present invention addresses a reduction in the percent defect of wirings of semiconductor device formed by sputtering a high-purity copper target so as to ensure favorable repeatability.
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