High purity copper or high purity copper alloy sputtering target, method for producing the same, and high purity copper or high purity copper alloy sputtered film

摘要

A high-purity copper or high-purity copper alloy sputtering target having a purity of 6N or more and a P, S, O, or C content of 1 ppm or less, each having a particle size of 0.5 μm or more and 20 μm or less Is a high-purity copper or high-purity copper alloy sputtering target, characterized in that it is 30,000 / g or less. Using high-purity copper and high-purity copper alloy with reduced harmful P, S, C, and O-based inclusions as raw materials, and controlling the form of non-metallic inclusions, sputtering of high-purity copper targets is performed. It is an object of the present invention to reduce the defect rate of semiconductor device wiring formed in a good reproducibility.