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HIGH-PURITY COPPER OR HIGH-PURITY COPPER ALLOY SPUTTERING TARGET, PROCESS FOR MANUFACTURING THE SPUTTERING TARGET, AND HIGH-PURITY COPPER OR HIGH-PURITY COPPER ALLOY SPUTTERED FILM
HIGH-PURITY COPPER OR HIGH-PURITY COPPER ALLOY SPUTTERING TARGET, PROCESS FOR MANUFACTURING THE SPUTTERING TARGET, AND HIGH-PURITY COPPER OR HIGH-PURITY COPPER ALLOY SPUTTERED FILM
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机译:高纯铜或高纯铜合金溅射靶材,制造溅射靶的过程以及高纯铜或高纯铜合金溅射膜
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摘要
Provided is a high-purity copper or high-purity copper alloy sputtering target of which the purity is 6N or higher and in which the content of the respective components of P, S, O and C is 1 ppm or less, wherein the number of nonmetal inclusions having a particle size of 0.5µm or more and 20µm or less is 30,000 inclusions/g or less. As a result of using high-purity copper or high-purity copper alloy from which harmful inclusions of P, S, C and O system have been reduced as the raw material and controlling the existence form of nonmetal inclusions, the present invention addresses a reduction in the percent defect of wirings of semiconductor device formed by sputtering a high-purity copper target so as to ensure favorable repeatability.
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