A method of manufacturing an integrated wave nitride based devices and integrated wave nitride based devices

摘要

The monolithic electronic device includes, one which was formed on the input of the pair which forms the surface acoustic wave device with respect to semi- insulated piezoelectric III family nitride epitaxial layer and the epitaxial layer which were formed on the baseplate and the baseplate and output interdigital transmitter and the baseplate electronic device (HEMT, MESFET, JFET and MOSFET, photodiode and LED etc) with at least. The electronic device from the SAW device, in the opposite direction separated expedient in order to separate electrically and acoustic from the electronic device is disclosed the SAW device. With several execution forms the trench is formed with SAW device and electronic device. Furthermore, ion implantation in order to form the semi- insulated III family nitride epitaxial layer which can produce the SAW device on that is disclosed. The absorption which it adjoins to the interdigital transmitter and/or the reflected part, makes the unnecessary reflection decrease which has the possibility of disturbing the operation of the SAW device.