INTEGRATED NITRIDE-BASED ACOUSTIC WAVE DEVICES AND METHODS OF FABRICATING INTEGRATED NITRIDE-BASED ACOUSTIC WAVE DEVICES

摘要

A monolithic electronic device includes a substrate, a semi-insulating,piezoelectric Group III-nitride epitaxial layer formed on the substrate, apair of input and output interdigital transducers forming a surface acousticwave device on the epitaxial layer and at least one electronic device (such asa HEMT, MESFET, JFET, MOSFET, photodiode, LED or the like) formed on thesubstrate. Isolation means are disclosed to electrically and acousticallyisolate the electronic device from the SAW device and vice versa. In someembodiments, a trench is formed between the SAW device and the electronicdevice. Ion implantation is also disclosed to form a semi-insulating Group III-nitride epitaxial layer on which the SAW device may be fabricated. Absorbingand/or reflecting elements adjacent the interdigital transducers reduceunwanted reflections that may interfere with the operation of the SAW device.