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Carrier mobility in surface-channel transistors, apparatus made therewith, and systems containing same
Carrier mobility in surface-channel transistors, apparatus made therewith, and systems containing same
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机译:表面沟道晶体管中的载流子迁移率,用其制造的装置以及包含该载流子的系统
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摘要
A surface channel transistor is provided in a semiconductive device. The surface channel transistor is either a PMOS or an NMOS device. Epitaxial layers are disposed above the surface channel transistor to cause an increased bandgap phenomenon nearer the surface of the device. A process of forming the surface channel transistor includes grading the epitaxial layers.
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