METHOD FOR FABRICATING INDIUM (In)-ANTIMONY (Sb)-TELLURIUM (Te) NANOWIRES AND PHASE-CHANGE MEMORY DEVICE COMPRISING THE NANOWIRES

摘要

Disclosed herein is a method for manufacturing (In)—(Sb)—(Te) (IST) nanowires and a phase-change memory device comprising the nanowires. The method comprises providing a substrate and vapors of In, Sb and Te precursors in a chamber and allowing the vapors to react with each other on the substrate in the chamber at a temperature of 230-300° C. and a pressure of 7-15 Torr. With the method, IST nanowires can be fabricated cost-effectively.