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Semiconductor device having vertically aligned pillar structures that have flat side surfaces and method for manufacturing the same
Semiconductor device having vertically aligned pillar structures that have flat side surfaces and method for manufacturing the same
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机译:具有具有平坦侧面的垂直对准的柱状结构的半导体器件及其制造方法
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摘要
A semiconductor device having vertically aligned transistors made from pillar structures that have flat side surfaces is presented. The semiconductor device includes a semiconductor substrate, spacers, and gates. The semiconductor substrate has pillar structures that have flat side surfaces. The spacers are on sidewalls only on the upper portions of the pillar structures. The gates surround lower portions of the pillar structures.
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