首页> 外国专利> Turn-on/turn-off snubber for a metallic-oxide-semiconductor field-effect transistor (MOSFET) class-D power amplifier

Turn-on/turn-off snubber for a metallic-oxide-semiconductor field-effect transistor (MOSFET) class-D power amplifier

机译:用于金属氧化物半导体场效应晶体管(MOSFET)D类功率放大器的开/关缓冲器

摘要

The present invention is an H-bridge power amplifier circuit which includes diodes connected in parallel with MOSFET switch pairs of the circuit, each MOSFET switch pair including a MOSFET switch and a reverse-conduction blocking switch. Further, the circuit includes a snubber inductor which is connected to the switch pairs and the diodes. The circuit further includes a control branch/control sub-circuit having a snubber capacitor and a control MOSFET switch. The circuit is configured for: blocking MOSFET negative current to prevent body diode conduction; inhibiting/preventing turn-off losses of the MOSFETs; and reducing switching losses associated with operation into inductive mistuning.
机译:本发明是一种H桥功率放大器电路,其包括与电路的MOSFET开关对并联连接的二极管,每个MOSFET开关对包括MOSFET开关和反向传导阻挡开关。此外,该电路包括连接到开关对和二极管的缓冲电感器。该电路进一步包括具有缓冲电容器和控制MOSFET开关的控制分支/控制子电路。该电路配置为:阻止MOSFET负电流以防止体二极管导通;抑制/防止MOSFET的关断损耗;并减少了与操作相关的开关损耗(感应式失谐)。

著录项

  • 公开/公告号US8040183B1

    专利类型

  • 公开/公告日2011-10-18

    原文格式PDF

  • 申请/专利权人 DAVID W. CRIPE;

    申请/专利号US20090562723

  • 发明设计人 DAVID W. CRIPE;

    申请日2009-09-18

  • 分类号H03F3/217;

  • 国家 US

  • 入库时间 2022-08-21 18:13:09

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