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MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal
MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal
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机译:具有开通和关断功能且具有单极性栅极输入信号的MOSFET门控双极晶体管和晶闸管
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摘要
MOSFET-gated bipolar transistor and thyristor integrated devices combining, as the respective turn-on and turn-off control devices, an enhancement mode MOSFET and a depletion mode MOSFET. The gates of the two MOSFETs are connected to a single device gate terminal. The conduction channel of the depletion mode MOSFET is preferably an implanted region. With gate voltage of appropriate polarity applied, the depletion mode MOSFET is non-conducting and the enhancement mode MOSFET is conducting, biasing the included bipolar transistor or thyristor into conduction. With zero gate voltage applied, the depletion mode MOSFET conducts and the enhancement mode MOSFET is non-conducting, turning off the included bipolar transistor or thyristor. Significantly, only a single polarity gate input signal is required.
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