MOSFET-GATED BIPOLAR TRANSISTORS AND THYRISTORS WITH BOTH TURN-ON AND TURN-OFF CAPABILITY HAVING SINGLE- POLARITY GATE INPUT SIGNAL

摘要

MOSFET-GATED BIPOLAR TRANSISTORS AND THYRISTORSWITH BOTH TURN-OFF CAPABILITYHAVING SINGLE-POLARITY GATE INPUT SIGNALABSTRACT OF THE DISCLOSUREMOSFET-gate bipolar transitor andthyristor integrated devices combining devices,respective turn-on and turn-off control devices,MOSFET. The gates of the two MOSFETs are connectedto a single device gate terminal. The Conductionchannel of the depletion mode MOSFET is preferablean implanted region. With gate voltage ofappropriate polarity applied, the depletion modeMOSFET is non-conducting and the enhancement modeMOSFET is conducting, biasing the included bipolartransistor or thyristor into conduction. With zerogate voltage applied, the depletion mode MOSFETconducts and the enhancement mode MOSFET is non-conducting, turning off the included bipolartransistor or thyristor. Significantly, only a singlepolarity gate input signal is required.