Bipolar power transistor associated with turn-on and turn-off MOS transistors

摘要

The present invention relates to a vertical bipolar transistor comprising, on one face of a substrate, emitter diffusions shaped like fingers E of a first type of conductivity which are arranged in the base fingers 12 of the second type of conductivity, themselves arranged in a substrate 11 of the first type of conductivity constituting the collector of the bipolar transistor. In the base fingers, there extend a first D2 and a second S1 finger of the first type of conductivity, a first insulated gate G2 (corresponding to the gate of a lateral MOS transistor) covering the interval between the first finger and the emitter finger. A metallisation 14 is in contact with the visible surfaces of the first and second finger and of the interposition portion of the base region. A second insulated gate G1 (corresponding to the gate of a vertical MOS transistor) covers the extreme lateral portion of the base region flush with the side of the second finger opposite the emitter finger. IMAGE