首页>
外国专利>
LOW CURRENT SWITCHING MAGNETIC TUNNEL JUNCTION DESIGN FOR MAGNETIC MEMORY USING DOMAIN WALL MOTION
LOW CURRENT SWITCHING MAGNETIC TUNNEL JUNCTION DESIGN FOR MAGNETIC MEMORY USING DOMAIN WALL MOTION
展开▼
机译:基于域壁运动的磁记忆低电流开关磁隧道结设计
展开▼
页面导航
摘要
著录项
相似文献
摘要
A multi-state low-current-switching magnetic memory element (magnetic memory element) comprising a free layer, two stacks, and a magnetic tunneling junction is disclosed. The stacks and magnetic tunneling junction are disposed upon surfaces of the free layer, with the magnetic tunneling junction located between the stacks. The stacks pin magnetic domains within the free layer, creating a free layer domain wall. A current passed from stack to stack pushes the domain wall, repositioning the domain wall within the free layer. The position of the domain wall relative to the magnetic tunnel junction corresponds to a unique resistance value, and passing current from a stack to the magnetic tunnel junction reads the magnetic memory element's resistance. Thus, unique memory states may be achieved by moving the domain wall.
展开▼