METHODS OF FORMING A METAL SILICATE LAYER AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE INCLUDING THE METAL SILICATE LAYER

摘要

Methods of forming a metal silicate layer and methods of fabricating a semiconductor device including the metal silicate layer are provided, the methods of forming the metal silicate layer include forming the metal silicate using a plurality of silicon precursors. The silicon precursors are homoleptic silicon precursors in which ligands bound to silicon have the same molecular structure.