Preparation and photooxidation properties of metal oxide semiconductors incorporated in layer silicates

摘要

Various metal oxide semiconductor nanoparticles (TiO2, ZnO, SnO2) were stabilized in the interlamellar space of clay minerals with a layered structure. In the first step, metal oxide/hydroxide nanosol particles were prepared by acidic hydrolysis, and the incorporation of the nanoparticles was next carried out between the layer silicates by a heterocoagulation method. Metal oxide semiconductor/layer silicate composites with large specific surface areas (as>BET=122–251 m2> g-1>) were prepared with (TiO2) and without calcination at 400 °C (ZnO, SnO2). The structure of these composites was characterized by X-ray diffraction measurements and their photocatalytic properties were determined in aqueous solutions, using salicylic acid as a test molecule.