PROCESS FOR FORMING SCHOTTKY RECTIFIER WITH PtNi SILICIDE SCHOTTKY BARRIER

摘要

A process for forming a Schottky barrier to silicon to a bather height selected at a value between 640 meV and 840 meV employs the deposition of a platinum or nickel film atop the silicon surface followed by the deposition of the other of a platinum or nickel film atop the first film. The two films are then exposed to anneal steps at suitable temperatures to cause their interdiffusion and a ultimate formation of Ni₂Si and Pt₂Si contacts to the silicon surface. The final silicide has a barrier height between that of the Pt and Ni, and will depend on the initial thicknesses of the Pt and Ni films and annealing temperature and time. Oxygen is injected into the system to form an SiO₂ passivation layer to improve the self aligned process.