METHOD OF MANUFACTURING INTEGRATED SEMICONDUCTOR LASER DEVICE, INTEGRATED SEMICONDUCTOR LASER DEVICE AND OPTICAL APPARATUS

摘要

A method of manufacturing a semiconductor laser device includes steps of forming a third oblong substrate by bonding a first oblong substrate and a second oblong substrate, and dividing the third oblong substrate so that first side surfaces of the first semiconductor laser devices protrude sideward from positions formed with third side surfaces of the second semiconductor laser devices while the fourth side surfaces of the second semiconductor laser devices protrude sideward from positions formed with the second side surfaces of the first semiconductor laser devices, and the first electrodes are located on protruding regions of the first semiconductor laser devices.