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METHOD FOR PRODUCING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR, WAFER INCLUDING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR, AND GROUP III NITRIDED-BASED COMPOUND SEMICONDUCTOR DEVICE
METHOD FOR PRODUCING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR, WAFER INCLUDING GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR, AND GROUP III NITRIDED-BASED COMPOUND SEMICONDUCTOR DEVICE
To produce a Group III nitride-based compound semiconductor having a m-plane main surface and uniformly oriented crystal axes.;A mesa having a side surface having an off-angle of 45° or less from c-plane is formed in a a-plane main surface of a sapphire substrate. Subsequently, trimethylaluminum is supplied at 300° C. to 420° C., to thereby form an aluminum layer having a thickness of 40 Å or less. The aluminum layer is nitridated to form an aluminum nitride layer. Through the procedure, a Group III nitride-based compound semiconductor is epitaxially grown only from a side surface of the mesa having an off-angle of 45° or less from c-plane in the sapphire substrate having an a-plane main surface. Thus, a Group III nitride-based compound semiconductor having m-plane which is parallel to the main surface of the sapphire substrate can be formed.
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