N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor
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机译:N极氮化铝镓/氮化镓增强模式场效应晶体管
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摘要
A novel enhancement mode field effect transistor (FET), such as a High Electron Mobility Transistors (HEMT), has an N-polar surface uses polarization fields to reduce the electron population under the gate in the N-polar orientation, has improved dispersion suppression, and low gate leakage.
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