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Method of programming and sensing memory cells using transverse channels and devices employing same
Method of programming and sensing memory cells using transverse channels and devices employing same
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机译:使用横向通道对存储单元进行编程和感测的方法以及采用该方法的设备
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摘要
A first channel in the substrate underlying a trap gate is biased to cause trapping of holes or electrons in the trap gate and thereby program the memory device to a programmed state. A second channel in the substrate underlying the trap gate and transverse to the first channel is biased to sense the programmed state. For example, biasing a first channel in the substrate underlying the trap gate to cause trapping of holes or electrons in the trap gate and thereby program the memory device to a programmed state may include applying voltages to a first source/drain region and first gate on a first side of the trap gate and to a second source/drain region and a second gate on a second side of the trap gate, and biasing a second channel in the substrate underlying the trap gate and transverse to the first channel to sense the programmed state may include applying voltages to a third source/drain region on a third side of the trap gate and to a fourth source/drain region on a fourth side of the trap gate.
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