首页>
外国专利>
Metal-gated MOSFET devices having scaled gate stack thickness including gettering species in a buried oxide
Metal-gated MOSFET devices having scaled gate stack thickness including gettering species in a buried oxide
展开▼
机译:金属栅MOSFET器件,栅栅厚度按比例缩放,包括掩埋氧化物中的吸杂物
展开▼
页面导航
摘要
著录项
相似文献
摘要
Metal-oxide semiconductor field effect transistor (MOSFET) devices having metal gate stacks and techniques for improving performance thereof are provided. In one aspect, a metal-oxide semiconductor device is provided comprising a substrate having a buried oxide layer at least a portion of which is configured to serve as a primary background oxygen getterer of the device; and a gate stack separated from the substrate by an interfacial oxide layer. The gate stack comprises a high-K layer over the interfacial oxide layer; and a metal gate layer over the high-K layer.
展开▼