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Field effect transistor incorporating at least one structure for imparting temperature-dependent strain on the channel region and associated method of forming the transistor
Field effect transistor incorporating at least one structure for imparting temperature-dependent strain on the channel region and associated method of forming the transistor
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机译:结合有至少一种用于在沟道区上施加温度相关应变的结构的场效应晶体管及其形成方法
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摘要
Disclosed are embodiments of a field effect transistor (FET) having decreased drive current temperature sensitivity. Specifically, any temperature-dependent carrier mobility change in the FET channel region is simultaneously counteracted by an opposite strain-dependent carrier mobility change to ensure that drive current remains approximately constant or at least within a predetermined range in response to temperature variations. This opposite strain-dependent carrier mobility change is provided by a straining structure that is configured to impart a temperature-dependent amount of a pre-selected strain type on the channel region. Also disclosed are embodiments of an associated method of forming the field effect transistor.
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