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Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygen

机译：电介质膜和使用包括including，铝或硅，氮和氧的电介质膜的半导体器件

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摘要

The present invention provides a dielectric film having a high permittivity and a high heat resistance. An embodiment of the present invention is a dielectric film (103) including a composite oxynitride containing an element A made of Hf, an element B made of Al or Si, and N and O, wherein mole fractions of the element A, the element B, and N expressed as B/(A+B+N) range from 0.015 to 0.095 and N/(A+B+N) equals or exceeds 0.045, and has a crystalline structure.

机译：本发明提供具有高介电常数和高耐热性的介电膜。本发明的一个实施方案是一种介电膜（ 103 ），其包括含有由Hf制成的元素A，由Al或Si制成的元素B以及N和O的复合氧氮化物，其中摩尔分数为以B /（A + B + N）表示的元素A，元素B和N在0.015至0.095的范围内，并且N /（A + B + N）等于或超过0.045，并且具有晶体结构。 展开▼

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公开/公告号US8030694B2

专利类型

公开/公告日2011-10-04

原文格式PDF

申请/专利权人 TAKASHI NAKAGAWA;NAOMU KITANO;TORU TATSUMI;
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申请/专利号US20100760084

发明设计人 TAKASHI NAKAGAWA;NAOMU KITANO;TORU TATSUMI;
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申请日2010-04-14

分类号H01L29/76;H01L29/47;H01L29/812;H01L31/07;H01L31/108;H01L29/792;

国家 US

入库时间 2022-08-21 18:09:08

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