首页> 外国专利> Magnetic tunnel transistor having a base structure that provides polarization of unpolarized electrons from an emitter based upon a magnetic orientation of a free layer and a self-pinned layer

Magnetic tunnel transistor having a base structure that provides polarization of unpolarized electrons from an emitter based upon a magnetic orientation of a free layer and a self-pinned layer

机译:具有基本结构的磁性隧道晶体管,该结构基于自由层和自固定层的磁取向提供来自发射器的非极化电子的极化

摘要

A magnetic tunnel transistor (MTT) is formed having an emitter that is configured to provide unpolarized electrons. A composite base is configured to provide polarization of the unpolarized electrons injected into the base by the emitter based upon a magnetic orientation of the free layer and the self-pinned layer of the base.
机译:形成具有发射极的磁性隧道晶体管(MTT),该发射极被配置为提供非极化电子。复合基底被配置为基于基底的自由层和自钉扎层的磁取向来提供由发射器注入到基底中的非极化电子的极化。

著录项

  • 公开/公告号US7916435B1

    专利类型

  • 公开/公告日2011-03-29

    原文格式PDF

  • 申请/专利权人 HARDAYAL SINGH GILL;

    申请/专利号US20070760911

  • 发明设计人 HARDAYAL SINGH GILL;

    申请日2007-06-11

  • 分类号G11B5/33;

  • 国家 US

  • 入库时间 2022-08-21 18:08:08

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