METHOD OF SWITCHING MAGNETIZATION ORIENTATION OF FERROMAGNETIC FREE LAYER OF OUT-OF-PLANE MAGNETIC TUNNEL JUNCTION CELL, MAGNETIC MEMORY SYSTEM, AND METHOD OF STORING DATA ELECTRONICALLY

摘要

PROBLEM TO BE SOLVED: To provide a magnetic spin-torque memory cell, often referred to as a magnetic tunnel junction cell, which has magnetic anisotropies (i.e., magnetization orientation) of an associated ferromagnetic layer aligned perpendicular to a wafer plane, or "out-of-plane", and a method of utilizing them.;SOLUTION: A method of switching the magnetization orientation of a ferromagnetic free layer of an out-of-plane magnetic tunnel junction cell comprises a step of passing an AC switching current through the out-of-plane magnetic tunnel junction cell. The AC switching current switches the magnetization orientation of the ferromagnetic free layer.;COPYRIGHT: (C)2012,JPO&INPIT