METHOD OF SWITCHING MAGNETIZATION ORIENTATION OF FERROMAGNETIC FREE LAYER OF OUT-OF-PLANE MAGNETIC TUNNEL JUNCTION CELLS, MAGNETIC MEMORY SYSTEM, AND METHOD OF STORING DATA ELECTRONICALLY

摘要

PROBLEM TO BE SOLVED: To provide magnetic spin-torque memory cells, often referred to as magnetic tunnel junction cells, which have magnetic anisotropies (i.e., magnetization orientation) of associated ferromagnetic layers aligned perpendicular to a wafer plane, or "out-of-plane", and methods of utilizing them.;SOLUTION: Provided is a method of switching the magnetization orientation of a ferromagnetic free layer of an out-of-plane magnetic tunnel junction cell, the method including passing an AC switching current through the out-of-plane magnetic tunnel junction cell. The AC switching current switches the magnetization orientation of the ferromagnetic free layer.;COPYRIGHT: (C)2014,JPO&INPIT