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Lateral power semiconductor device for high frequency power conversion system, has isolation layer formed over substrate for reducing minority carrier storage in substrate
Lateral power semiconductor device for high frequency power conversion system, has isolation layer formed over substrate for reducing minority carrier storage in substrate
A lateral power semiconductor device has a substrate and an isolation layer formed over the substrate for reducing minority carrier storage in the substrate. A well region is formed over the isolation layer. A source region, drain region, and channel region are formed in the well. A first region is formed on a surface of the lateral power semiconductor device adjacent to the source region. The lateral power semiconductor device has a body diode between the first region and drain region. The isolation layer confines the minority carrier charge from the body diode to a depth of less than 20 μm from the surface of the lateral power semiconductor device. In one embodiment, the isolation layer is a buried oxide layer and the substrate is an n-type or p-type handle wafer. Alternatively, the isolation layer is an epitaxial layer and the substrate is made with N+ or P+ semiconductor material.
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