Substrate potential shift due to parasitic minority carrier injection in smart-power ICs : measurements and full-chip 3D device simulation

摘要

Substrate current injection effects are one of the major risks for smart-power IC functionality, often leading to redesigns. Smart-power ICs for motor control consist of four power transistors in H-bridge configuration and the controlling circuitry on a single chip. During switching of the power stages driving an inductive load (e.g. a motor), parasitic bipolar transistors turn on and inject electrons and holes into the substrate. This leads to a substrate potential shift with the risk of disturbing the functionality of the controlling circuitry or even triggering a latch-up. The substrate potential shift due to minority carrier injection by the lateral parasitic NPN transistor has been measured on a test chip and analyzed by 3D device simulation. The previously calibrated 3D device simulation and the measurements are in good agreement. The influence of protecting measures (substrate contacts) and the backside contact has been inves- tigated experimentally. For the first time, the potential shift due to the parasitic substrate NPN transistor has been measured and simulated in 3D on an entire chip.