首页> 外国专利> SOLAR CELL SILICON CELL ON GLASS WITH A SILICON DIOXIDE TEXTURE LAYER AND MANUFACTURING METHOD.

SOLAR CELL SILICON CELL ON GLASS WITH A SILICON DIOXIDE TEXTURE LAYER AND MANUFACTURING METHOD.

机译:具有二氧化硅纹理层的玻璃上的太阳能电池硅电池及其制造方法。

摘要

A method for forming a light retention structure in a thin-film silicon solar cell formed on a glass or superstratum substrate (11), the method including the steps of: a) applying a texture layer (32) to a surface of the glass substrate or superstratum (11), the texture layer (32) comprising texture particles (34/37) retained in a bonding matrix (33), the texture layer (32) being applied by preparing a glass Sol-Gel of SiO2 containing SiO2 textured particles (34/37), applying the Sol-Gel glass to the surface of the substrate or superstratum (11) so that the thickness of the glass film after being applied is less at an average diameter of the textured particles; b) heating the Sol-Gel glass until sintered, whereby after sintering the sol-gel becomes a dielectric layer of SiO2; c) forming a thin conformable barrier layer (38), in which the barrier layer material is silicon nitride with a thickness of 70 nm ± 20%. d) forming a silicon film (15) on the barrier layer on the textured surface, in which the silicon film (15) is less than 10μm thick; and e) form a photovoltaic device structure in the silicon film.
机译:一种在玻璃或上层基板(11)上形成的薄膜硅太阳能电池中形成保光结构的方法,该方法包括以下步骤:a)在玻璃基板的表面上施加纹理层(32)。或上层(11),包括保留在粘结基质(33)中的纹理颗粒(34/37)的纹理层(32),通过制备包含SiO2纹理颗粒的SiO2玻璃溶胶凝胶来施加纹理层(32) (34/37),将Sol-Gel玻璃涂覆到基板或上层(11)的表面上,使得涂覆后的玻璃膜的厚度在纹理化颗粒的平均直径处较小; b)加热Sol-Gel玻璃直至烧结,从而在烧结后,Sol-Gel成为SiO 2的介电层; c)形成薄的适形阻挡层(38),其中阻挡层材料是厚度为70nm±20%的氮化硅。 d)在纹理化表面的阻挡层上形成硅膜(15),其中硅膜(15)的厚度小于10μm; e)在硅膜上形成光电器件结构。

著录项

  • 公开/公告号ES2351034T3

    专利类型

  • 公开/公告日2011-01-31

    原文格式PDF

  • 申请/专利权人 CSG SOLAR AG;

    申请/专利号ES19990957710T

  • 发明设计人 JI JING;SHI ZHENGRONG;

    申请日1999-11-08

  • 分类号H01L31/0236;H01L31/04;H01L31/0392;H01L31/052;H01L31/056;H01L31/06;H01L31/18;

  • 国家 ES

  • 入库时间 2022-08-21 18:02:47

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