首页> 外国专利> METHOD FOR PREPARING OF CERIUM OXIDE POWDER FOR CHEMICAL MECHANICAL POLISHING AND METHOD FOR PREPARING OF CHEMICAL MECHANICAL POLISHING SLURRY USING THE SAME

METHOD FOR PREPARING OF CERIUM OXIDE POWDER FOR CHEMICAL MECHANICAL POLISHING AND METHOD FOR PREPARING OF CHEMICAL MECHANICAL POLISHING SLURRY USING THE SAME

机译:用于化学机械抛光的二氧化铈粉末的制备方法以及使用该方法制备化学机械抛光泥的方法

摘要

The present invention relates to a method of preparing a cerium oxide powder for a CMP slurry and a method of preparing a CMP slurry using the same, and more particularly, to a method of preparing a cerium oxide powder for a CMP slurry and a method of preparing a CMP slurry using the same in which the specific surface area of the powder is increased by preparing a cerium precursor, and then decomposing and calcinating the prepared cerium precursor. The pore distribution is controlled to increase the chemical contact area between a polished film and a polishing material, thereby reducing polishing time while the physical strength of powder is decreased, which remarkably reduces scratches on a polished film.
机译:本发明涉及一种用于CMP浆料的氧化铈粉末的制备方法和使用该浆料制备CMP浆料的方法,更具体地,涉及一种用于CMP浆料的氧化铈粉末的制备方法及制备方法。使用相同的方法制备CMP浆料,其中通过制备铈前体,然后分解和煅烧制备的铈前体来增加粉末的比表面积。控制孔分布以增加抛光膜与抛光材料之间的化学接触面积,从而减少抛光时间,同时降低粉末的物理强度,这显着减少了抛光膜上的划痕。

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