Ternary content addressable magnetoresistive random access memory cell

摘要

A method for writing a magnetic random access memory-based ternary content addressable memory cell (1) comprising a first magnetic tunnel junction (2) being formed from a storage layer (23), a sense layer (21) having a magnetization direction adjustable relative to the magnetization of the storage layer (23), and an insulating layer (22) between the storage and sense layers (23, 21); a sense line (3) coupled with the storage layer (23); a first field line (4) and a second field line (5), and the first field line (4) being orthogonal with the second field line (5); comprising: providing a first write data to said storage layer (23) via the second field line (5) to store a first stored data with a high or low logic state; characterized in that , the method further comprises providing the first write data to said storage layer (23) via the first field line (4) to store the first stored data with a masked logic state.