NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND A MANUFACTURING METHOD THEREOF, CAPABLE OF IMPROVING LIGHT OUTPUT

摘要

PURPOSE: A nitride semiconductor light emitting device and a manufacturing method thereof are provided to reduce mechanical stress by providing a sapphire substrate with an optimal thickness.;CONSTITUTION: A sapphire substrate has a thickness of 140 to 200 um. A first conductive nitride layer, an active layer, and a second conductive nitride layer are successively laminated on the sapphire substrate. The first electrode and the second electrode are electrically connected to the first conductive nitride layer and the second conductive nitride layer. The thickness of the sapphire substrate is 160 um to 180 um.;COPYRIGHT KIPO 2011