SPACER PATTERNING PROCESS WHICH USES A POSITIVE-NEGATIVE PHOTORESIST, CAPABLE OF IMPROVING YIELD BY SIMPLIFYING A ETCHING PROCESS

摘要

PURPOSE: A spacer patterning process using a positive-negative photoresist is provided to implement a pattern below 40 nm in one etching process by using a hard mask and a single process.;CONSTITUTION: An oxide film(202) is formed on the upper side of a substrate(200). A poly silicon layer(207) is formed on the oxide layer. A first photoresist pattern is formed on the upper side of the poly silicon layer. A second photoresist pattern(220a) is formed on the sidewall of the first photoresist pattern. A second photoresist spacer is formed by removing the first photoresist pattern through an exposing process.;COPYRIGHT KIPO 2011