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DATA BUFFER CONTROLLING CIRCUIT, CAPABLE OF GENERATING AN INTERNAL COMMAND SIGNAL BY COMBINING LEVELS OF EXTERNAL COMMAND SIGNALS, AND A SEMICONDUCTOR MEMORY DEVICE
DATA BUFFER CONTROLLING CIRCUIT, CAPABLE OF GENERATING AN INTERNAL COMMAND SIGNAL BY COMBINING LEVELS OF EXTERNAL COMMAND SIGNALS, AND A SEMICONDUCTOR MEMORY DEVICE
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机译:数据缓冲区控制电路,能够通过组合外部命令信号的电平和半导体存储器来生成内部命令信号
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摘要
PURPOSE: A data buffer controlling circuit and a semiconductor memory device are provided to secure sufficient margin between a data buffer enable timing and a data input timing by advancing the data buffer enable timing.;CONSTITUTION: An internal command signal generating part(11) generates an internal command signal. A first logical element obtains the inverting signal of delaying command signals(CSBD, RASBD) and implements a logical operation. A second logical element obtains another delaying command signals(CASBD, WEBD) and implements the logical operation. A logical part implements the logical operation by obtaining the output signal of the logical elements. A buffer enable signal generating part(12) is synchronized with the falling edge of an internal clock signal in order to generate the buffer enable signal.;COPYRIGHT KIPO 2011
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