Semiconducting memory device reads data signal held in write buffer as data signal requested by read command if write command and read command address signals coincide

摘要

The memory device has an address temporary storage and comparison stage that temporarily stores a first address signal associated with a write command and compares the address signal with a second address signal associated with a read command and a write data buffer that holds a data part associated with the write command. The data signal held in the buffer is read as a data signal requested by a read command if the first and second address signals coincide.